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Sedra Microelectronic Circuits 6th c2010 txtbk.pdf


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4.4.2 Use of the Zener as a Shunt Regulator
4.4.3 Temperature Effects
4.4.4 A Final Remark
4.5 Rectifier Circuits
4.5.1 The Half-Wave Rectifier
4.5.2 The Full-Wave Rectifier
4.5.3 The Bridge Rectifier
4.5.4 The Rectifier with a Filter Capacitor-The Peak Rectifier
4.5.5 Precision Half-Wave Rectifier-The Super Diode
4.6 Limiting and Clamping Circuits
4.6.1 Limiter Circuits
4.6.2 The Clamped Capacitor or DC Restorer
4.6.3 The Voltage Doubler
4.7 Special Diode Types
4.7.1 The Schottky-Barrier Diode (SBD)
4.7.2 Varactors
4.7.3 Photodiodes
4.7.4 Light-Emitting Diodes (LEDs)
Summary
Problems
Chapter 5. MOS Field-Effect Transistors (MOSFETs)
5.1 Device Structure and Physical Operation
5.1.1 Device Structure
5.1.2 Operation with Zero Gate Voltage
5.1.3 Creating a Channel for Current Flow
5.1.4 Applying a Small ?DS
5.1.5 Operation as ?DS is Increased
5.1.6 Operation for ?DS ? VOV
5.1.7 The p-Channel MOSFET
5.1.8 Complementary MOS or CMOS
5.1.9 Operating the MOS Transistor in the Subthreshold Region
5.2 Current-Voltage Characteristics
5.2.1 Circuit Symbol
5.2.2 The iD- ?DS Characteristics
5.2.3 The iD-nuGS Characteristic
5.2.4 Finite Output Resistance in Saturation
5.2.5 Characteristics of the p-Channel MOSFET
5.3 MOSFET Circuits at DC
5.4 Applying the MOSFET in Amplifier Design
5.4.1 Obtaining a Voltage Amplifier
5.4.2 The Voltage Transfer Characteristic (VTC)
5.4.3 Biasing the MOSFET to Obtain Linear Amplification
5.4.4 The Small-Signal Voltage Gain
5.4.5 Determining the VTC by Graphical Analysis
5.4.6 Locating the Bias Point Q
5.5 Small-Signal Operation and Models
5.5.1 The DC Bias Point
5.5.2 The Signal Current in the Drain Terminal
5.5.3 Voltage Gain
5.5.4 Separating the DC Analysis and the Signal Analysis
5.5.5 Small-Signal Equivalent Circuit Models
5.5.6 The Transconductance gm
5.5.7 The T Equivalent Circuit Model