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Sedra Microelectronic Circuits 6th c2010 txtbk.pdf

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5.5.8 Summary
5.6 Basic MOSFET Amplifier Configurations
5.6.1 The Three Basic Configurations
5.6.2 Characterizing Amplifiers
5.6.3 The Common-Source Configuration
5.6.4 The Common-Source Amplifier with a Source Resistance
5.6.5 The Common-Gate Amplifier
5.6.6 The Common-Drain Amplifier or Source Follower
5.6.7 Summary and Comparisons
5.7 Biasing in MOS Amplifier Circuits
5.7.1 Biasing by Fixing VGS
5.7.2 Biasing by Fixing VG and Connecting a Resistance in the Source
5.7.3 Biasing Using a Drain-to-Gate Feedback Resistance
5.7.4 Biasing Using a Constant-Current Source
5.7.5 A Final Remark
5.8 Discrete-Circuit MOS Amplifiers
5.8.1 The Basic Structure
5.8.2 The Common-Source (CS) Amplifier
5.8.3 The Common-Source Amplifier with a Source Resistance
5.8.4 The Common-Gate Amplifier
5.8.5 The Source Follower
5.8.6 The Amplifier Bandwidth
5.9 The Body Effect and Other Topics
5.9.1 The Role of the Substrate-The Body Effect
5.9.2 Modeling the Body Effect
5.9.3 Temperature Effects
5.9.4 Breakdown and Input Protection
5.9.5 Velocity Saturation
5.9.6 The Depletion-Type MOSFET
Chapter 6. Bipolar Junction Transistors (BJTs)
6.1 Device Structure and Physical Operation
6.1.1 Simplified Structure and Modes of Operation
6.1.2 Operation of the npn Transistor in the Active Mode
Current Flow
The Collector Current
The Base Current
The Emitter Current
Recapitulation and Equivalent-Circuit Models
6.1.3 Structure of Actual Transistors
6.1.4 Operation in the Saturation Mode
6.1.5 The pnp Transistor
6.2 Current-Voltage Characteristics
6.2.1 Circuit Symbols and Conventions
The Constant n
Collector-Base Reverse Current (ICBO)
6.2.2 Graphical Representation of Transistor Characteristics
6.2.3 Dependence of iC on the Collector Voltage-The Early Effect
6.2.4 An Alternative Form of the Common-Emitter Characteristics
The Common-Emitter Current Gain ?
The Saturation Voltage VCEsat and Saturation Resistance RCEsat
6.3 BJT Circuits at DC